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IXYP8N90C3

IXYP8N90C3

For Reference Only

Part Number IXYP8N90C3
PNEDA Part # IXYP8N90C3
Description IGBT 900V 20A 125W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP8N90C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP8N90C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYP8N90C3 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)48A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 8A
Power - Max125W
Switching Energy460µJ (on), 180µJ (off)
Input TypeStandard
Gate Charge13.3nC
Td (on/off) @ 25°C16ns/40ns
Test Condition450V, 8A, 30Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

225A

Current - Collector Pulsed (Icm)

460A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 70A

Power - Max

830W

Switching Energy

1.27mJ (on), 2mJ (off)

Input Type

Standard

Gate Charge

168nC

Td (on/off) @ 25°C

29ns/150ns

Test Condition

400V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

APT44GA60BD30

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

130A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 26A

Power - Max

337W

Switching Energy

409µJ (on), 258µJ (off)

Input Type

Standard

Gate Charge

128nC

Td (on/off) @ 25°C

16ns/84ns

Test Condition

400V, 26A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

STGP3HF60HD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

7.5A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.95V @ 15V, 1.5A

Power - Max

38W

Switching Energy

19µJ (on), 12µJ (off)

Input Type

Standard

Gate Charge

12nC

Td (on/off) @ 25°C

11ns/60ns

Test Condition

400V, 1.5A, 100Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

IXGH31N60

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 31A

Power - Max

150W

Switching Energy

6mJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

15ns/400ns

Test Condition

480V, 31A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IKY75N120CH3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 75A

Power - Max

938W

Switching Energy

3.4mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

370nC

Td (on/off) @ 25°C

38ns/303ns

Test Condition

600V, 75A, 6Ohm, 15V

Reverse Recovery Time (trr)

292ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4

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