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IXYP20N120C3

IXYP20N120C3

For Reference Only

Part Number IXYP20N120C3
PNEDA Part # IXYP20N120C3
Description IGBT 1200V 40A 278W TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP20N120C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP20N120C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYP20N120C3, IXYP20N120C3 Datasheet (Total Pages: 6, Size: 221.72 KB)
PDFIXYA20N120C3HV Datasheet Cover
IXYA20N120C3HV Datasheet Page 2 IXYA20N120C3HV Datasheet Page 3 IXYA20N120C3HV Datasheet Page 4 IXYA20N120C3HV Datasheet Page 5 IXYA20N120C3HV Datasheet Page 6

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IXYP20N120C3 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Power - Max278W
Switching Energy1.3mJ (on), 500µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C20ns/90ns
Test Condition600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 32A

Power - Max

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Switching Energy

950µJ (on), 2.9mJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Renesas Electronics America

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 8A

Power - Max

52W

Switching Energy

80µJ (on), 90µJ (off)

Input Type

Standard

Gate Charge

20.5nC

Td (on/off) @ 25°C

30ns/55ns

Test Condition

300V, 8A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

238W

Switching Energy

190µJ (off)

Input Type

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Gate Charge

114nC

Td (on/off) @ 25°C

-/210ns

Test Condition

400V, 40A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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FGP3440G2-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, EcoSPARK®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

26.9A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.2V @ 4V, 6A

Power - Max

166W

Switching Energy

-

Input Type

Logic

Gate Charge

24nC

Td (on/off) @ 25°C

1µs/5.3µs

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.9V @ 4V, 150A

Power - Max

600mW

Switching Energy

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Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

1.7µs/2µs

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

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