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IXYH40N65C3D1

IXYH40N65C3D1

For Reference Only

Part Number IXYH40N65C3D1
PNEDA Part # IXYH40N65C3D1
Description IGBT 650V 80A 300W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH40N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH40N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYH40N65C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)180A
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 40A
Power - Max300W
Switching Energy830µJ (on), 360µJ (off)
Input TypeStandard
Gate Charge66nC
Td (on/off) @ 25°C23ns/110ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)120ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

400W

Switching Energy

4.7mJ (off)

Input Type

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Gate Charge

135nC

Td (on/off) @ 25°C

20ns/350ns

Test Condition

720V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 32A

Power - Max

300W

Switching Energy

840µJ (on), 660µJ (off)

Input Type

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Gate Charge

115nC

Td (on/off) @ 25°C

22ns/130ns

Test Condition

480V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

STGD3NC120H-1

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

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Power - Max

105W

Switching Energy

236µJ (on), 290µJ (off)

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

15ns/118ns

Test Condition

800V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

36A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

75µJ (on), 225µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IRGS10B60KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 10A

Power - Max

156W

Switching Energy

140µJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

30ns/230ns

Test Condition

400V, 10A, 47Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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