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RJH1CF4RDPQ-80#T2

RJH1CF4RDPQ-80#T2

For Reference Only

Part Number RJH1CF4RDPQ-80#T2
PNEDA Part # RJH1CF4RDPQ-80-T2
Description IGBT 1200V 40A 156.2W TO247
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 1 - Feb 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJH1CF4RDPQ-80#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJH1CF4RDPQ-80#T2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
RJH1CF4RDPQ-80#T2, RJH1CF4RDPQ-80#T2 Datasheet (Total Pages: 7, Size: 98.66 KB)
PDFRJH1CF4RDPQ-80#T2 Datasheet Cover
RJH1CF4RDPQ-80#T2 Datasheet Page 2 RJH1CF4RDPQ-80#T2 Datasheet Page 3 RJH1CF4RDPQ-80#T2 Datasheet Page 4 RJH1CF4RDPQ-80#T2 Datasheet Page 5 RJH1CF4RDPQ-80#T2 Datasheet Page 6 RJH1CF4RDPQ-80#T2 Datasheet Page 7

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RJH1CF4RDPQ-80#T2 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max156.2W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

950µJ (on), 840µJ (off)

Input Type

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Gate Charge

113nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

400V, 36A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Power - Max

750W

Switching Energy

2.8mJ (on), 1mJ (off)

Input Type

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Gate Charge

123nC

Td (on/off) @ 25°C

27ns/93ns

Test Condition

400V, 60A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

IRG6I320UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 24A

Power - Max

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Switching Energy

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Input Type

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46nC

Td (on/off) @ 25°C

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Test Condition

196V, 12A, 10Ohm

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

80W

Switching Energy

82µJ (on), 155µJ (off)

Input Type

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Gate Charge

34.4nC

Td (on/off) @ 25°C

22.5ns/116ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

410A

Current - Collector Pulsed (Icm)

1100A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

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Switching Energy

5mJ (on), 4mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

60ns/370ns

Test Condition

400V, 100A, 0Ohm, 15V

Reverse Recovery Time (trr)

108ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

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