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IXXX110N65B4H1

IXXX110N65B4H1

For Reference Only

Part Number IXXX110N65B4H1
PNEDA Part # IXXX110N65B4H1
Description IGBT 650V 240A 880W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXX110N65B4H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXX110N65B4H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXXX110N65B4H1, IXXX110N65B4H1 Datasheet (Total Pages: 7, Size: 245.78 KB)
PDFIXXK110N65B4H1 Datasheet Cover
IXXK110N65B4H1 Datasheet Page 2 IXXK110N65B4H1 Datasheet Page 3 IXXK110N65B4H1 Datasheet Page 4 IXXK110N65B4H1 Datasheet Page 5 IXXK110N65B4H1 Datasheet Page 6 IXXK110N65B4H1 Datasheet Page 7

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IXXX110N65B4H1 Specifications

ManufacturerIXYS
SeriesGenX4™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)240A
Current - Collector Pulsed (Icm)630A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 110A
Power - Max880W
Switching Energy2.2mJ (on), 1.05mJ (off)
Input TypeStandard
Gate Charge183nC
Td (on/off) @ 25°C38ns/156ns
Test Condition400V, 55A, 2Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Power - Max

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Switching Energy

670µJ (on), 740µJ (off)

Input Type

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Gate Charge

70nC

Td (on/off) @ 25°C

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Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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700nC

Td (on/off) @ 25°C

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Test Condition

600V, 110A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

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Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.56V @ 15V, 10A

Power - Max

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Switching Energy

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Gate Charge

4.8nC

Td (on/off) @ 25°C

10ns/90ns

Test Condition

600V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

220W

Switching Energy

120µJ (on), 90µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

17ns/42ns

Test Condition

300V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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