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IXXP12N65B4D1

IXXP12N65B4D1

For Reference Only

Part Number IXXP12N65B4D1
PNEDA Part # IXXP12N65B4D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXP12N65B4D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXP12N65B4D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXP12N65B4D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX4™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)38A
Current - Collector Pulsed (Icm)70A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 12A
Power - Max160W
Switching Energy440µJ (on), 220µJ (off)
Input TypeStandard
Gate Charge34nC
Td (on/off) @ 25°C13ns/158ns
Test Condition400V, 12A, 20Ohm, 15V
Reverse Recovery Time (trr)43ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

310A

Current - Collector Pulsed (Icm)

840A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 140A

Power - Max

1630W

Switching Energy

4.3mJ (on), 4mJ (off)

Input Type

Standard

Gate Charge

330nC

Td (on/off) @ 25°C

40ns/145ns

Test Condition

450V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 15A

Power - Max

150W

Switching Energy

1.75mJ (off)

Input Type

Standard

Gate Charge

69nC

Td (on/off) @ 25°C

25ns/180ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

FGPF45N45TTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

450V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 20A

Power - Max

51.6W

Switching Energy

-

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F

AUIRGP35B60PD-E

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.55V @ 15V, 35A

Power - Max

308W

Switching Energy

220µJ (on), 215µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

26ns/110ns

Test Condition

390V, 22A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

IXDP35N60B

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

70A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 35A

Power - Max

250W

Switching Energy

1.6mJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

120nC

Td (on/off) @ 25°C

-

Test Condition

300V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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