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IXXA30N65C3HV

IXXA30N65C3HV

For Reference Only

Part Number IXXA30N65C3HV
PNEDA Part # IXXA30N65C3HV
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXA30N65C3HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXA30N65C3HV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXA30N65C3HV Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)52A
Current - Collector Pulsed (Icm)113A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 24A
Power - Max230W
Switching Energy500µJ (on), 450µJ (off)
Input TypeStandard
Gate Charge37nC
Td (on/off) @ 25°C33ns/125ns
Test Condition400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)33ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263HV

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 35A

Power - Max

300W

Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

40ns/150ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.96V @ 15V, 120A

Power - Max

160W

Switching Energy

-

Input Type

Standard

Gate Charge

65nC

Td (on/off) @ 25°C

36ns/112ns

Test Condition

196V, 25A, 10Ohm

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IRGB4060DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 8A

Power - Max

99W

Switching Energy

70µJ (on), 145µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

30ns/95ns

Test Condition

400V, 8A, 47Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRGS6B60KDTRRP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

26A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Power - Max

90W

Switching Energy

110µJ (on), 135µJ (off)

Input Type

Standard

Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Test Condition

400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed 2™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

500A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 100A

Power - Max

830W

Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

370nC

Td (on/off) @ 25°C

40ns/120ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

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