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IRGS6B60KDTRRP

IRGS6B60KDTRRP

For Reference Only

Part Number IRGS6B60KDTRRP
PNEDA Part # IRGS6B60KDTRRP
Description IGBT 600V 13A 90W D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGS6B60KDTRRP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGS6B60KDTRRP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGS6B60KDTRRP Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)26A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
Power - Max90W
Switching Energy110µJ (on), 135µJ (off)
Input TypeStandard
Gate Charge18.2nC
Td (on/off) @ 25°C25ns/215ns
Test Condition400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)70ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

600V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1400V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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960V, 28A, 5Ohm, 15V

Reverse Recovery Time (trr)

350ns

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Package / Case

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Supplier Device Package

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