Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY08N100P

IXTY08N100P

For Reference Only

Part Number IXTY08N100P
PNEDA Part # IXTY08N100P
Description MOSFET N-CH 1000V 800MA TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY08N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY08N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY08N100P Datasheet
  • where to find IXTY08N100P
  • IXYS

  • IXYS IXTY08N100P
  • IXTY08N100P PDF Datasheet
  • IXTY08N100P Stock

  • IXTY08N100P Pinout
  • Datasheet IXTY08N100P
  • IXTY08N100P Supplier

  • IXYS Distributor
  • IXTY08N100P Price
  • IXTY08N100P Distributor

IXTY08N100P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs11.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FCH072N60F-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6330pF @ 100V

FET Feature

-

Power Dissipation (Max)

481W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

BSP318SL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

STB27NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 50V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SUM110N08-07P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4250pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 208.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RJK6011DJE-00#Z0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 25V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body (Formed Leads)

Recently Sold

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

AT24C256-10TI-2.7

AT24C256-10TI-2.7

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8TSSOP

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

BTS723GWXUMA1

BTS723GWXUMA1

Infineon Technologies

IC PWR SW 2CH 58V HISIDE PDSO14

MAX1104EUA+

MAX1104EUA+

Maxim Integrated

IC CODEC 8BIT 8-UMAX

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

AUIPS2031R

AUIPS2031R

Infineon Technologies

IC SW IPS 1CH LOW SIDE DPAK

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

74VCX162244MTD

74VCX162244MTD

ON Semiconductor

IC BUF NON-INVERT 3.6V 48TSSOP

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

SHT11

SHT11

Sensirion AG

SENSOR HUMID/TEMP 5V DTL 3% SMD