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IXTT90P10P

IXTT90P10P

For Reference Only

Part Number IXTT90P10P
PNEDA Part # IXTT90P10P
Description MOSFET P-CH 100V 90A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 18,612
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 20 - Nov 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT90P10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT90P10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT90P10P, IXTT90P10P Datasheet (Total Pages: 5, Size: 132.42 KB)
PDFIXTT90P10P Datasheet Cover
IXTT90P10P Datasheet Page 2 IXTT90P10P Datasheet Page 3 IXTT90P10P Datasheet Page 4 IXTT90P10P Datasheet Page 5

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IXTT90P10P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 25V
FET Feature-
Power Dissipation (Max)462W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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