Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR20N80P

IXFR20N80P

For Reference Only

Part Number IXFR20N80P
PNEDA Part # IXFR20N80P
Description MOSFET N-CH 800V 11A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR20N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR20N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR20N80P, IXFR20N80P Datasheet (Total Pages: 4, Size: 133.87 KB)
PDFIXFC20N80P Datasheet Cover
IXFC20N80P Datasheet Page 2 IXFC20N80P Datasheet Page 3 IXFC20N80P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFR20N80P Datasheet
  • where to find IXFR20N80P
  • IXYS

  • IXYS IXFR20N80P
  • IXFR20N80P PDF Datasheet
  • IXFR20N80P Stock

  • IXFR20N80P Pinout
  • Datasheet IXFR20N80P
  • IXFR20N80P Supplier

  • IXYS Distributor
  • IXFR20N80P Price
  • IXFR20N80P Distributor

IXFR20N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4680pF @ 25V
FET Feature-
Power Dissipation (Max)166W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

The Products You May Be Interested In

IRF640L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FCH041N65EFLN4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

5V @ 7.6mA

Gate Charge (Qg) (Max) @ Vgs

298nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12560pF @ 100V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4

Package / Case

TO-247-4

SQJA46EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

10Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

FET Feature

-

Power Dissipation (Max)

830mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IPB034N03LGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

IP4220CZ6,125

IP4220CZ6,125

Nexperia

TVS DIODE 5.5V 6TSOP

ADM2481BRWZ

ADM2481BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC

KA7810AETU

KA7810AETU

ON Semiconductor

IC REG LINEAR 10V 1A TO220-3

P6KE16A

P6KE16A

Taiwan Semiconductor Corporation

TVS DIODE 13.6V 22.5V DO15

AZ1117EH-3.3TRG1

AZ1117EH-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

AD8622ARZ

AD8622ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

TSV912IDT

TSV912IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

IXBT12N300HV

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

MB96F673ABPMC-GSE1

MB96F673ABPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 96KB FLASH 64LQFP