Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTR120P20T

IXTR120P20T

For Reference Only

Part Number IXTR120P20T
PNEDA Part # IXTR120P20T
Description MOSFET P-CH 200V 90A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTR120P20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTR120P20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTR120P20T, IXTR120P20T Datasheet (Total Pages: 6, Size: 197.51 KB)
PDFIXTR120P20T Datasheet Cover
IXTR120P20T Datasheet Page 2 IXTR120P20T Datasheet Page 3 IXTR120P20T Datasheet Page 4 IXTR120P20T Datasheet Page 5 IXTR120P20T Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTR120P20T Datasheet
  • where to find IXTR120P20T
  • IXYS

  • IXYS IXTR120P20T
  • IXTR120P20T PDF Datasheet
  • IXTR120P20T Stock

  • IXTR120P20T Pinout
  • Datasheet IXTR120P20T
  • IXTR120P20T Supplier

  • IXYS Distributor
  • IXTR120P20T Price
  • IXTR120P20T Distributor

IXTR120P20T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs32mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs740nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds73000pF @ 25V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseTO-247-3

The Products You May Be Interested In

TSM4N90CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

955pF @ 25V

FET Feature

-

Power Dissipation (Max)

38.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

RJK6014DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

575mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

BSS119L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id

2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

2.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

78pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

FDAF62N28

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

280V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

51mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4630pF @ 25V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

IPS80R750P7AKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 500V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

B560CQ-13-F

B560CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

SDP1108-R

SDP1108-R

Sensirion AG

SENSOR PRESSURE DIFF MODULE

TA8428K(O,S)

TA8428K(O,S)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER 7V-27V 7HSIP

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

ISD2360SYI

ISD2360SYI

Nuvoton Technology

IC VOICE REC/PLAY 64SEC 16SOP

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

TSV912IDT

TSV912IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

VS-72CPQ030PBF

VS-72CPQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO247AC

ACF451832-153-TD01

ACF451832-153-TD01

TDK

FILTER LC(T) SMD