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IXTQ200N06P

IXTQ200N06P

For Reference Only

Part Number IXTQ200N06P
PNEDA Part # IXTQ200N06P
Description MOSFET N-CH 60V 200A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ200N06P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ200N06P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ200N06P, IXTQ200N06P Datasheet (Total Pages: 5, Size: 149.93 KB)
PDFIXTQ200N06P Datasheet Cover
IXTQ200N06P Datasheet Page 2 IXTQ200N06P Datasheet Page 3 IXTQ200N06P Datasheet Page 4 IXTQ200N06P Datasheet Page 5

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IXTQ200N06P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 400A, 15V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400pF @ 25V
FET Feature-
Power Dissipation (Max)714W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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