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IRF7769L2TR1PBF

IRF7769L2TR1PBF

For Reference Only

Part Number IRF7769L2TR1PBF
PNEDA Part # IRF7769L2TR1PBF
Description MOSFET N-CH 100V 375A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7769L2TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7769L2TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7769L2TR1PBF, IRF7769L2TR1PBF Datasheet (Total Pages: 11, Size: 259.66 KB)
PDFIRF7769L2TR1PBF Datasheet Cover
IRF7769L2TR1PBF Datasheet Page 2 IRF7769L2TR1PBF Datasheet Page 3 IRF7769L2TR1PBF Datasheet Page 4 IRF7769L2TR1PBF Datasheet Page 5 IRF7769L2TR1PBF Datasheet Page 6 IRF7769L2TR1PBF Datasheet Page 7 IRF7769L2TR1PBF Datasheet Page 8 IRF7769L2TR1PBF Datasheet Page 9 IRF7769L2TR1PBF Datasheet Page 10 IRF7769L2TR1PBF Datasheet Page 11

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IRF7769L2TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11560pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET L8
Package / CaseDirectFET™ Isometric L8

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