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IXTQ120N20P

IXTQ120N20P

For Reference Only

Part Number IXTQ120N20P
PNEDA Part # IXTQ120N20P
Description MOSFET N-CH 200V 120A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ120N20P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ120N20P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ120N20P, IXTQ120N20P Datasheet (Total Pages: 5, Size: 191.38 KB)
PDFIXTK120N20P Datasheet Cover
IXTK120N20P Datasheet Page 2 IXTK120N20P Datasheet Page 3 IXTK120N20P Datasheet Page 4 IXTK120N20P Datasheet Page 5

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IXTQ120N20P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)714W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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