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IXTP6N100D2

IXTP6N100D2

For Reference Only

Part Number IXTP6N100D2
PNEDA Part # IXTP6N100D2
Description MOSFET N-CH 1000V 6A TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP6N100D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP6N100D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP6N100D2, IXTP6N100D2 Datasheet (Total Pages: 5, Size: 165.03 KB)
PDFIXTP6N100D2 Datasheet Cover
IXTP6N100D2 Datasheet Page 2 IXTP6N100D2 Datasheet Page 3 IXTP6N100D2 Datasheet Page 4 IXTP6N100D2 Datasheet Page 5

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IXTP6N100D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs95nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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