IXTP6N100D2 Datasheet
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
