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IXTP4N80P

IXTP4N80P

For Reference Only

Part Number IXTP4N80P
PNEDA Part # IXTP4N80P
Description MOSFET N-CH 800V 3.5A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP4N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP4N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP4N80P, IXTP4N80P Datasheet (Total Pages: 4, Size: 173.21 KB)
PDFIXTA4N80P Datasheet Cover
IXTA4N80P Datasheet Page 2 IXTA4N80P Datasheet Page 3 IXTA4N80P Datasheet Page 4

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IXTP4N80P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs14.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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