IXTA4N80P Datasheet
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Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
