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IXTP3N100P

IXTP3N100P

For Reference Only

Part Number IXTP3N100P
PNEDA Part # IXTP3N100P
Description MOSFET N-CH 1000V 3A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP3N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP3N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP3N100P, IXTP3N100P Datasheet (Total Pages: 4, Size: 150.23 KB)
PDFIXTP3N100P Datasheet Cover
IXTP3N100P Datasheet Page 2 IXTP3N100P Datasheet Page 3 IXTP3N100P Datasheet Page 4

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IXTP3N100P Specifications

ManufacturerIXYS
SeriesPolarVHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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