IPD60R1K4C6
For Reference Only
| Part Number | IPD60R1K4C6 |
| PNEDA Part # | IPD60R1K4C6 |
| Description | MOSFET N-CH 600V 3.2A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,434 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD60R1K4C6 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD60R1K4C6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPD60R1K4C6 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 100V FET Feature - Power Dissipation (Max) 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 399mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 100V FET Feature - Power Dissipation (Max) 198W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621 Package / Case 6-PowerVFDFN |
