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IXTP2N80P

IXTP2N80P

For Reference Only

Part Number IXTP2N80P
PNEDA Part # IXTP2N80P
Description MOSFET N-CH 800V 2A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP2N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP2N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP2N80P, IXTP2N80P Datasheet (Total Pages: 5, Size: 888.15 KB)
PDFIXTU2N80P Datasheet Cover
IXTU2N80P Datasheet Page 2 IXTU2N80P Datasheet Page 3 IXTU2N80P Datasheet Page 4 IXTU2N80P Datasheet Page 5

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IXTP2N80P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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