IXTU2N80P Datasheet
IXYS Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
IXYS Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IXYS Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |