IXTN120P20T Datasheet
IXTN120P20T Datasheet
Total Pages: 6
Size: 182.26 KB
IXYS
This datasheet covers 1 part numbers:
IXTN120P20T
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Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 106A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 73000pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
