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IXTH20N65X

IXTH20N65X

For Reference Only

Part Number IXTH20N65X
PNEDA Part # IXTH20N65X
Description MOSFET N-CH 650V 20A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH20N65X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH20N65X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH20N65X, IXTH20N65X Datasheet (Total Pages: 6, Size: 231.05 KB)
PDFIXTA20N65X Datasheet Cover
IXTA20N65X Datasheet Page 2 IXTA20N65X Datasheet Page 3 IXTA20N65X Datasheet Page 4 IXTA20N65X Datasheet Page 5 IXTA20N65X Datasheet Page 6

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IXTH20N65X Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1390pF @ 25V
FET Feature-
Power Dissipation (Max)320W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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