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IXTH1N170DHV

IXTH1N170DHV

For Reference Only

Part Number IXTH1N170DHV
PNEDA Part # IXTH1N170DHV
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH1N170DHV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH1N170DHV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH1N170DHV, IXTH1N170DHV Datasheet (Total Pages: 5, Size: 233.51 KB)
PDFIXTA1N170DHV Datasheet Cover
IXTA1N170DHV Datasheet Page 2 IXTA1N170DHV Datasheet Page 3 IXTA1N170DHV Datasheet Page 4 IXTA1N170DHV Datasheet Page 5

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IXTH1N170DHV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3090pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

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