IXTA1N170DHV Datasheet
|
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 290W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 1A (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 0V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 290W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247HV Package / Case TO-247-3 Variant |
