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IXTH12N100L

IXTH12N100L

For Reference Only

Part Number IXTH12N100L
PNEDA Part # IXTH12N100L
Description MOSFET N-CH 1000V 12A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH12N100L Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH12N100L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH12N100L, IXTH12N100L Datasheet (Total Pages: 5, Size: 147.73 KB)
PDFIXTH12N100L Datasheet Cover
IXTH12N100L Datasheet Page 2 IXTH12N100L Datasheet Page 3 IXTH12N100L Datasheet Page 4 IXTH12N100L Datasheet Page 5

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IXTH12N100L Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs1.3Ohm @ 500mA, 20V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs155nC @ 20V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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