IXTH12N100L Datasheet
IXTH12N100L Datasheet
Total Pages: 5
Size: 147.73 KB
IXYS
This datasheet covers 1 part numbers:
IXTH12N100L
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 1.3Ohm @ 500mA, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 155nC @ 20V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 400W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
