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IXTA80N10T7

IXTA80N10T7

For Reference Only

Part Number IXTA80N10T7
PNEDA Part # IXTA80N10T7
Description MOSFET N-CH 100V 80A TO-263-7
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA80N10T7 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA80N10T7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA80N10T7, IXTA80N10T7 Datasheet (Total Pages: 5, Size: 163.42 KB)
PDFIXTA80N10T7 Datasheet Cover
IXTA80N10T7 Datasheet Page 2 IXTA80N10T7 Datasheet Page 3 IXTA80N10T7 Datasheet Page 4 IXTA80N10T7 Datasheet Page 5

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IXTA80N10T7 Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3040pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7 (IXTA..7)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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