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IXFN64N60P

IXFN64N60P

For Reference Only

Part Number IXFN64N60P
PNEDA Part # IXFN64N60P
Description MOSFET N-CH 600V 50A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN64N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN64N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN64N60P, IXFN64N60P Datasheet (Total Pages: 5, Size: 148.09 KB)
PDFIXFN64N60P Datasheet Cover
IXFN64N60P Datasheet Page 2 IXFN64N60P Datasheet Page 3 IXFN64N60P Datasheet Page 4 IXFN64N60P Datasheet Page 5

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IXFN64N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs96mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds12000pF @ 25V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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