Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA110N055P

IXTA110N055P

For Reference Only

Part Number IXTA110N055P
PNEDA Part # IXTA110N055P
Description MOSFET N-CH 55V 110A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA110N055P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA110N055P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA110N055P, IXTA110N055P Datasheet (Total Pages: 5, Size: 254.77 KB)
PDFIXTQ110N055P Datasheet Cover
IXTQ110N055P Datasheet Page 2 IXTQ110N055P Datasheet Page 3 IXTQ110N055P Datasheet Page 4 IXTQ110N055P Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA110N055P Datasheet
  • where to find IXTA110N055P
  • IXYS

  • IXYS IXTA110N055P
  • IXTA110N055P PDF Datasheet
  • IXTA110N055P Stock

  • IXTA110N055P Pinout
  • Datasheet IXTA110N055P
  • IXTA110N055P Supplier

  • IXYS Distributor
  • IXTA110N055P Price
  • IXTA110N055P Distributor

IXTA110N055P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

STF4N52K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

525V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

334pF @ 100V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

154mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7020pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

TO-247-3

SIPC46N60CFDX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPP21N03L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IRF7207

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

SML-D12U8WT86

SML-D12U8WT86

Rohm Semiconductor

LED RED DIFFUSED 0603 SMD

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

HCTL-1101-PLC

HCTL-1101-PLC

Broadcom

IC MOTOR DRIVER BIPOLAR 44PLCC

LM2901DR2G

LM2901DR2G

ON Semiconductor

IC COMP QUAD SGL SUPPLY 14SOIC

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

MMSZ4699T1G

MMSZ4699T1G

ON Semiconductor

DIODE ZENER 12V 500MW SOD123