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IPC302N12N3X1SA1

IPC302N12N3X1SA1

For Reference Only

Part Number IPC302N12N3X1SA1
PNEDA Part # IPC302N12N3X1SA1
Description MOSFET N-CH 120V 1A SAWN ON FOIL
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC302N12N3X1SA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC302N12N3X1SA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPC302N12N3X1SA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 275µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSawn on foil
Package / CaseDie

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