IPC302N12N3X1SA1
For Reference Only
| Part Number | IPC302N12N3X1SA1 |
| PNEDA Part # | IPC302N12N3X1SA1 |
| Description | MOSFET N-CH 120V 1A SAWN ON FOIL |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,160 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPC302N12N3X1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPC302N12N3X1SA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPC302N12N3X1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sawn on foil |
| Package / Case | Die |
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5.5V @ 135µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V FET Feature - Power Dissipation (Max) 38W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 520mA (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 717pF @ 100V FET Feature - Power Dissipation (Max) 8.3W (Ta), 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-DFN-EP (8x8) Package / Case 4-PowerTSFN |
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