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IXT-1-1N100S1-TR

IXT-1-1N100S1-TR

For Reference Only

Part Number IXT-1-1N100S1-TR
PNEDA Part # IXT-1-1N100S1-TR
Description MOSFET N-CH 1000V 1.5A 8-SOIC
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXT-1-1N100S1-TR Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXT-1-1N100S1-TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXT-1-1N100S1-TR Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Drive Voltage (Max Rds On, Min Rds On)

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Operating Temperature

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Mounting Type

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