Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXT-1-1N100S1-TR

IXT-1-1N100S1-TR

For Reference Only

Part Number IXT-1-1N100S1-TR
PNEDA Part # IXT-1-1N100S1-TR
Description MOSFET N-CH 1000V 1.5A 8-SOIC
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXT-1-1N100S1-TR Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXT-1-1N100S1-TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXT-1-1N100S1-TR Datasheet
  • where to find IXT-1-1N100S1-TR
  • IXYS

  • IXYS IXT-1-1N100S1-TR
  • IXT-1-1N100S1-TR PDF Datasheet
  • IXT-1-1N100S1-TR Stock

  • IXT-1-1N100S1-TR Pinout
  • Datasheet IXT-1-1N100S1-TR
  • IXT-1-1N100S1-TR Supplier

  • IXYS Distributor
  • IXT-1-1N100S1-TR Price
  • IXT-1-1N100S1-TR Distributor

IXT-1-1N100S1-TR Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

PH955L,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

62.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2836pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

197nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13100pF @ 25V

FET Feature

-

Power Dissipation (Max)

1300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

570mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

126nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7300pF @ 25V

FET Feature

-

Power Dissipation (Max)

660W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

IRLR8503PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

FET Feature

-

Power Dissipation (Max)

62W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

JANTXV2N6901

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/570

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 1.07A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

8.33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-205AF (TO-39)

Package / Case

TO-205AF Metal Can

Recently Sold

MC34063ABD

MC34063ABD

STMicroelectronics

IC REG BUCK BST ADJ 1.5A 8SO

MT29F16G08ABACAWP-ITZ:C

MT29F16G08ABACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

3296W-1-503LF

3296W-1-503LF

Bourns

TRIMMER 50K OHM 0.5W PC PIN TOP

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

LM393DT

LM393DT

Rohm Semiconductor

IC COMPARATOR DUAL 0.4MA 8-SOIC

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

AD8051ARTZ-R2

AD8051ARTZ-R2

Analog Devices

IC OPAMP VFB 1 CIRCUIT SOT23-5

PC357N4J000F

PC357N4J000F

SHARP/Socle Technology

OPTOISO 3.75KV TRANS 4-MINI-FLAT

FXMA2102UMX

FXMA2102UMX

ON Semiconductor

IC TRNSLTR BIDIRECTIONAL 8MLP

LT1764AEQ#PBF

LT1764AEQ#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 3A 5DDPAK