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FQI50N06TU

FQI50N06TU

For Reference Only

Part Number FQI50N06TU
PNEDA Part # FQI50N06TU
Description MOSFET N-CH 60V 50A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI50N06TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI50N06TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI50N06TU, FQI50N06TU Datasheet (Total Pages: 11, Size: 1,065.81 KB)
PDFFQI50N06TU Datasheet Cover
FQI50N06TU Datasheet Page 2 FQI50N06TU Datasheet Page 3 FQI50N06TU Datasheet Page 4 FQI50N06TU Datasheet Page 5 FQI50N06TU Datasheet Page 6 FQI50N06TU Datasheet Page 7 FQI50N06TU Datasheet Page 8 FQI50N06TU Datasheet Page 9 FQI50N06TU Datasheet Page 10 FQI50N06TU Datasheet Page 11

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FQI50N06TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1540pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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