Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXST30N60B2D1

IXST30N60B2D1

For Reference Only

Part Number IXST30N60B2D1
PNEDA Part # IXST30N60B2D1
Description IGBT 600V 48A 250W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXST30N60B2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXST30N60B2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXST30N60B2D1, IXST30N60B2D1 Datasheet (Total Pages: 6, Size: 516.77 KB)
PDFIXST30N60B2D1 Datasheet Cover
IXST30N60B2D1 Datasheet Page 2 IXST30N60B2D1 Datasheet Page 3 IXST30N60B2D1 Datasheet Page 4 IXST30N60B2D1 Datasheet Page 5 IXST30N60B2D1 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXST30N60B2D1 Datasheet
  • where to find IXST30N60B2D1
  • IXYS

  • IXYS IXST30N60B2D1
  • IXST30N60B2D1 PDF Datasheet
  • IXST30N60B2D1 Stock

  • IXST30N60B2D1 Pinout
  • Datasheet IXST30N60B2D1
  • IXST30N60B2D1 Supplier

  • IXYS Distributor
  • IXST30N60B2D1 Price
  • IXST30N60B2D1 Distributor

IXST30N60B2D1 Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)48A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Power - Max250W
Switching Energy550µJ (off)
Input TypeStandard
Gate Charge50nC
Td (on/off) @ 25°C30ns/130ns
Test Condition400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

The Products You May Be Interested In

STGB35N35LZT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

345V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

1.7V @ 4.5V, 15A

Power - Max

176W

Switching Energy

-

Input Type

Logic

Gate Charge

49nC

Td (on/off) @ 25°C

1.1µs/26.5µs

Test Condition

300V, 15A, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IRGP4263-EPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 48A

Power - Max

300W

Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

150nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

IRGP4740DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 24A

Power - Max

250W

Switching Energy

520µJ (on), 240µJ (off)

Input Type

Standard

Gate Charge

70nC

Td (on/off) @ 25°C

24ns/73ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

STGW25M120DF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 25A

Power - Max

375W

Switching Energy

850µJ (on), 1.3mJ (off)

Input Type

Standard

Gate Charge

85nC

Td (on/off) @ 25°C

28ns/150ns

Test Condition

600V, 25A, 15Ohm, 15V

Reverse Recovery Time (trr)

265ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IKY75N120CH3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 75A

Power - Max

938W

Switching Energy

3.4mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

370nC

Td (on/off) @ 25°C

38ns/303ns

Test Condition

600V, 75A, 6Ohm, 15V

Reverse Recovery Time (trr)

292ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4

Recently Sold

MAX14757EUE+

MAX14757EUE+

Maxim Integrated

IC SWITCH QUAD SPST 16TSSOP

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

ON Semiconductor

-60V7.7MOHMSINGLE

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC

ESD3V3D5B-TP

ESD3V3D5B-TP

Micro Commercial Co

TVS DIODE 3.3V 12V SOD523

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

10MQ060NTR

10MQ060NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.1A SMA

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15