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IXST30N60B

IXST30N60B

For Reference Only

Part Number IXST30N60B
PNEDA Part # IXST30N60B
Description IGBT 600V 55A 200W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXST30N60B Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXST30N60B
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXST30N60B, IXST30N60B Datasheet (Total Pages: 4, Size: 131.51 KB)
PDFIXST30N60B Datasheet Cover
IXST30N60B Datasheet Page 2 IXST30N60B Datasheet Page 3 IXST30N60B Datasheet Page 4

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IXST30N60B Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)55A
Current - Collector Pulsed (Icm)110A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Power - Max200W
Switching Energy1.5mJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C30ns/150ns
Test Condition480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

32.3ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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