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IXSK30N60BD1

IXSK30N60BD1

For Reference Only

Part Number IXSK30N60BD1
PNEDA Part # IXSK30N60BD1
Description IGBT 600V 55A 200W TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,694
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSK30N60BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSK30N60BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSK30N60BD1, IXSK30N60BD1 Datasheet (Total Pages: 5, Size: 119.01 KB)
PDFIXSK30N60BD1 Datasheet Cover
IXSK30N60BD1 Datasheet Page 2 IXSK30N60BD1 Datasheet Page 3 IXSK30N60BD1 Datasheet Page 4 IXSK30N60BD1 Datasheet Page 5

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IXSK30N60BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)55A
Current - Collector Pulsed (Icm)110A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 55A
Power - Max200W
Switching Energy1.5mJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C30ns/150ns
Test Condition480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA(IXSK)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

350W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

460A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

183nC

Td (on/off) @ 25°C

38ns/156ns

Test Condition

400V, 55A, 2Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 175°C (TJ)

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Rohm Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

40nC

Td (on/off) @ 25°C

22ns/75ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

58ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2V @ 15V, 100A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

770nC

Td (on/off) @ 25°C

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Test Condition

600V, 100A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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