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IXYX100N65B3D1

IXYX100N65B3D1

For Reference Only

Part Number IXYX100N65B3D1
PNEDA Part # IXYX100N65B3D1
Description IGBT 650V 188A 1150W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYX100N65B3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYX100N65B3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYX100N65B3D1, IXYX100N65B3D1 Datasheet (Total Pages: 7, Size: 221.64 KB)
PDFIXYX100N65B3D1 Datasheet Cover
IXYX100N65B3D1 Datasheet Page 2 IXYX100N65B3D1 Datasheet Page 3 IXYX100N65B3D1 Datasheet Page 4 IXYX100N65B3D1 Datasheet Page 5 IXYX100N65B3D1 Datasheet Page 6 IXYX100N65B3D1 Datasheet Page 7

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IXYX100N65B3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)225A
Current - Collector Pulsed (Icm)460A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 70A
Power - Max830W
Switching Energy1.27mJ (on), 1.37mJ (off)
Input TypeStandard
Gate Charge168nC
Td (on/off) @ 25°C29ns/150ns
Test Condition400V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)156ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

1.55V @ 15V, 24A

Power - Max

190W

Switching Energy

640µJ (off)

Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

13ns/150ns

Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 40A

Power - Max

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Switching Energy

2.7mJ (on), 1.6mJ (off)

Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

22ns/177ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

IRG6S320UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 24A

Power - Max

114W

Switching Energy

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Input Type

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Gate Charge

46nC

Td (on/off) @ 25°C

24ns/89ns

Test Condition

196V, 12A, 10Ohm

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

IRG4PF50WD-201P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

51A

Current - Collector Pulsed (Icm)

204A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 28A

Power - Max

200W

Switching Energy

2.63mJ (on), 1.34mJ (off)

Input Type

Standard

Gate Charge

160nC

Td (on/off) @ 25°C

50ns/110ns

Test Condition

720V, 28A, 5Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

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