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IXGM30N60

IXGM30N60

For Reference Only

Part Number IXGM30N60
PNEDA Part # IXGM30N60
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM30N60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM30N60
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGM30N60 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max200W
Switching Energy-
Input TypeStandard
Gate Charge180nC
Td (on/off) @ 25°C100ns/500ns
Test Condition-
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

67A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

246W

Switching Energy

1.06mJ (on), 610µJ (off)

Input Type

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Gate Charge

177nC

Td (on/off) @ 25°C

18ns/222ns

Test Condition

400V, 40A, 10.1Ohm, 15V

Reverse Recovery Time (trr)

87ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

TrenchStop™

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

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Power - Max

714W

Switching Energy

3.1mJ (on), 2.5mJ (off)

Input Type

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Gate Charge

610nC

Td (on/off) @ 25°C

30ns/290ns

Test Condition

400V, 100A, 3.6Ohm, 15V

Reverse Recovery Time (trr)

230ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

700V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 40A

Power - Max

268W

Switching Energy

1.15mJ (on), 271µJ (off)

Input Type

Standard

Gate Charge

69nC

Td (on/off) @ 25°C

22ns/66ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IRGBC30UD2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

100W

Switching Energy

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Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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