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IXRP15N120

IXRP15N120

For Reference Only

Part Number IXRP15N120
PNEDA Part # IXRP15N120
Description IGBT 1200V 25A 300W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXRP15N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXRP15N120
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXRP15N120, IXRP15N120 Datasheet (Total Pages: 2, Size: 82.4 KB)
PDFIXRP15N120 Datasheet Cover
IXRP15N120 Datasheet Page 2

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IXRP15N120 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)25A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.95V @ 15V, 10A
Power - Max300W
Switching Energy1.1mJ (on), 130µJ (off)
Input TypeStandard
Gate Charge36nC
Td (on/off) @ 25°C-
Test Condition600V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr)300ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

1.25V @ 4V, 6A

Power - Max

125W

Switching Energy

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Input Type

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26nC

Td (on/off) @ 25°C

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Test Condition

300V, 10A, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

160µJ (on), 200µJ (off)

Input Type

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Gate Charge

97nC

Td (on/off) @ 25°C

15ns/65ns

Test Condition

300V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

FGD3040G2-F085C

ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

21nC

Td (on/off) @ 25°C

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Test Condition

300V, 6.5A, 1000Ohm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-PAK (TO-252)

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