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IXGM17N100A

IXGM17N100A

For Reference Only

Part Number IXGM17N100A
PNEDA Part # IXGM17N100A
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM17N100A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM17N100A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGM17N100A, IXGM17N100A Datasheet (Total Pages: 2, Size: 570.59 KB)
PDFIXGM17N100A Datasheet Cover
IXGM17N100A Datasheet Page 2

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IXGM17N100A Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)34A
Current - Collector Pulsed (Icm)68A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 17A
Power - Max150W
Switching Energy3mJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C100ns/500ns
Test Condition800V, 17A, 82Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

220W

Switching Energy

270µJ (on), 90µJ (off)

Input Type

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Gate Charge

38nC

Td (on/off) @ 25°C

16ns/42ns

Test Condition

300V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

43A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Power - Max

147W

Switching Energy

2.5mJ (on), 3mJ (off)

Input Type

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Gate Charge

76nC

Td (on/off) @ 25°C

70ns/250ns

Test Condition

600V, 25A, 39Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

Thunderbolt IGBT®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

43A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

174W

Switching Energy

215µJ (on), 245µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

8ns/80ns

Test Condition

400V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 24A

Power - Max

150W

Switching Energy

2mJ (off)

Input Type

Standard

Gate Charge

75nC

Td (on/off) @ 25°C

100ns/450ns

Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

FGPF7N60RUFDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

21A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 7A

Power - Max

41W

Switching Energy

230µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

24nC

Td (on/off) @ 25°C

60ns/60ns

Test Condition

300V, 7A, 30Ohm, 15V

Reverse Recovery Time (trr)

65ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

TO-220F

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