IXGT60N60
For Reference Only
| Part Number | IXGT60N60 |
| PNEDA Part # | IXGT60N60 |
| Description | IGBT 600V 75A 300W TO268 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,032 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXGT60N60 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXGT60N60 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IXGT60N60 Specifications
| Manufacturer | IXYS |
| Series | - |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
| Power - Max | 300W |
| Switching Energy | 8mJ (off) |
| Input Type | Standard |
| Gate Charge | 130nC |
| Td (on/off) @ 25°C | 50ns/300ns |
| Test Condition | 480V, 60A, 2.7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268 |
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Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power - Max 260W Switching Energy 393µJ (off) Input Type Standard Gate Charge 149nC Td (on/off) @ 25°C -/146ns Test Condition 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Microsemi Corporation Series POWER MOS 8™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 145A Current - Collector Pulsed (Icm) 239A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A Power - Max 625W Switching Energy 1652µJ (on), 1389µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 18ns/149ns Test Condition 600V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr) 25ns Operating Temperature - Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 55A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 27A Power - Max 200W Switching Energy 80µJ (on), 320µJ (off) Input Type Standard Gate Charge - Td (on/off) @ 25°C 46ns/120ns Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-273AA Supplier Device Package SUPER-220™ (TO-273AA) |
