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IXGK50N60BD1

IXGK50N60BD1

For Reference Only

Part Number IXGK50N60BD1
PNEDA Part # IXGK50N60BD1
Description IGBT 600V 75A 300W TO264AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGK50N60BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGK50N60BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGK50N60BD1, IXGK50N60BD1 Datasheet (Total Pages: 5, Size: 120.19 KB)
PDFIXGK50N60BD1 Datasheet Cover
IXGK50N60BD1 Datasheet Page 2 IXGK50N60BD1 Datasheet Page 3 IXGK50N60BD1 Datasheet Page 4 IXGK50N60BD1 Datasheet Page 5

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IXGK50N60BD1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Power - Max300W
Switching Energy1.5mJ (off)
Input TypeStandard
Gate Charge110nC
Td (on/off) @ 25°C50ns/200ns
Test Condition480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXGK)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

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Power - Max

195W

Switching Energy

410µJ (on), 950µJ (off)

Input Type

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Gate Charge

90nC

Td (on/off) @ 25°C

10ns/150ns

Test Condition

800V, 15A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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APT30GP60B2DLG

Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

260µJ (on), 250µJ (off)

Input Type

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Gate Charge

90nC

Td (on/off) @ 25°C

13ns/55ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 10A

Power - Max

150W

Switching Energy

190µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

64nC

Td (on/off) @ 25°C

12ns/168ns

Test Condition

400V, 10A, 26Ohm, 15V

Reverse Recovery Time (trr)

72ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

IRGP4263D1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 48A

Power - Max

325W

Switching Energy

2.9mJ (on), 1.4mJ (off)

Input Type

Standard

Gate Charge

145nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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