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IXGM40N60

IXGM40N60

For Reference Only

Part Number IXGM40N60
PNEDA Part # IXGM40N60
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM40N60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM40N60
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGM40N60 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max250W
Switching Energy-
Input TypeStandard
Gate Charge250nC
Td (on/off) @ 25°C100ns/600ns
Test Condition480V, 40A, 22Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

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Power - Max

75W

Switching Energy

5.4mJ (off)

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

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Series

TrenchStop™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

53A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Power - Max

200W

Switching Energy

710µJ (on), 420µJ (off)

Input Type

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Gate Charge

130nC

Td (on/off) @ 25°C

15ns/179ns

Test Condition

400V, 30A, 10.5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Power - Max

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Switching Energy

350µJ (on), 825µJ (off)

Input Type

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Gate Charge

102nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

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ON Semiconductor

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

46A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 10A

Power - Max

250W

Switching Energy

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Input Type

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Gate Charge

32nC

Td (on/off) @ 25°C

-/10.8µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

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Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

195W

Switching Energy

410µJ (on), 950µJ (off)

Input Type

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Gate Charge

90nC

Td (on/off) @ 25°C

10ns/150ns

Test Condition

800V, 15A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220 [K]

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