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FGA60N65SMD

FGA60N65SMD

For Reference Only

Part Number FGA60N65SMD
PNEDA Part # FGA60N65SMD
Description IGBT 650V 120A 600W TO3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA60N65SMD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA60N65SMD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA60N65SMD, FGA60N65SMD Datasheet (Total Pages: 11, Size: 433.55 KB)
PDFFGA60N65SMD Datasheet Cover
FGA60N65SMD Datasheet Page 2 FGA60N65SMD Datasheet Page 3 FGA60N65SMD Datasheet Page 4 FGA60N65SMD Datasheet Page 5 FGA60N65SMD Datasheet Page 6 FGA60N65SMD Datasheet Page 7 FGA60N65SMD Datasheet Page 8 FGA60N65SMD Datasheet Page 9 FGA60N65SMD Datasheet Page 10 FGA60N65SMD Datasheet Page 11

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FGA60N65SMD Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)180A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 60A
Power - Max600W
Switching Energy1.54mJ (on), 450µJ (off)
Input TypeStandard
Gate Charge189nC
Td (on/off) @ 25°C18ns/104ns
Test Condition400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr)47ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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STMicroelectronics

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

26ns/108ns

Test Condition

400V, 20A, 12Ohm, 15V

Reverse Recovery Time (trr)

166ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

4.95mJ (on), 2.78mJ (off)

Input Type

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Gate Charge

215nC

Td (on/off) @ 25°C

29ns/192ns

Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IRGP50B60PD1-EP

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

390V, 33A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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