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IXGH50N90B2

IXGH50N90B2

For Reference Only

Part Number IXGH50N90B2
PNEDA Part # IXGH50N90B2
Description IGBT 900V 75A 400W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH50N90B2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH50N90B2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH50N90B2, IXGH50N90B2 Datasheet (Total Pages: 5, Size: 162.41 KB)
PDFIXGT50N90B2 Datasheet Cover
IXGT50N90B2 Datasheet Page 2 IXGT50N90B2 Datasheet Page 3 IXGT50N90B2 Datasheet Page 4 IXGT50N90B2 Datasheet Page 5

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IXGH50N90B2 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Power - Max400W
Switching Energy4.7mJ (off)
Input TypeStandard
Gate Charge135nC
Td (on/off) @ 25°C20ns/350ns
Test Condition720V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

400W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

145A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 30A

Power - Max

500W

Switching Energy

2.6mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

69nC

Td (on/off) @ 25°C

19ns/130ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STGWA15M120DF3

STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 15A

Power - Max

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Switching Energy

550µJ (on), 850µJ (off)

Input Type

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Td (on/off) @ 25°C

26ns/122ns

Test Condition

600V, 15A, 22Ohm, 15V

Reverse Recovery Time (trr)

270ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Power - Max

463W

Switching Energy

130µJ (on), 92µJ (off)

Input Type

Standard

Gate Charge

180nC

Td (on/off) @ 25°C

20ns/135ns

Test Condition

180V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGY100T65SCDT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

200A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

Power - Max

750W

Switching Energy

5.4mJ (on), 3.8mJ (off)

Input Type

Standard

Gate Charge

157nC

Td (on/off) @ 25°C

84ns/216ns

Test Condition

400V, 100A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

62ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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