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IXGQ35N120BD1

IXGQ35N120BD1

For Reference Only

Part Number IXGQ35N120BD1
PNEDA Part # IXGQ35N120BD1
Description IGBT 1200V 75A 400W TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ35N120BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ35N120BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGQ35N120BD1, IXGQ35N120BD1 Datasheet (Total Pages: 6, Size: 550.89 KB)
PDFIXGQ35N120BD1 Datasheet Cover
IXGQ35N120BD1 Datasheet Page 2 IXGQ35N120BD1 Datasheet Page 3 IXGQ35N120BD1 Datasheet Page 4 IXGQ35N120BD1 Datasheet Page 5 IXGQ35N120BD1 Datasheet Page 6

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IXGQ35N120BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
Power - Max400W
Switching Energy900µJ (on), 3.8mJ (off)
Input TypeStandard
Gate Charge140nC
Td (on/off) @ 25°C40ns/270ns
Test Condition960V, 35A, 3Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 20A

Power - Max

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Switching Energy

1.16mJ (on), 470µJ (off)

Input Type

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Gate Charge

79nC

Td (on/off) @ 25°C

16ns/93ns

Test Condition

600V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

TO-220AB

IXSH50N60B

IXYS

Manufacturer

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

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Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

STGWA40S120DF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 40A

Power - Max

468W

Switching Energy

1.43mJ (on), 3.83mJ (off)

Input Type

Standard

Gate Charge

129nC

Td (on/off) @ 25°C

35ns/148ns

Test Condition

600V, 40A, 15Ohm, 15V

Reverse Recovery Time (trr)

355ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

180W

Switching Energy

2.85mJ (on), 6.47mJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

16ns/290ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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