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IXGH10N170

IXGH10N170

For Reference Only

Part Number IXGH10N170
PNEDA Part # IXGH10N170
Description IGBT 1700V 20A 110W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH10N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH10N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH10N170, IXGH10N170 Datasheet (Total Pages: 5, Size: 189.44 KB)
PDFIXGT10N170 Datasheet Cover
IXGT10N170 Datasheet Page 2 IXGT10N170 Datasheet Page 3 IXGT10N170 Datasheet Page 4 IXGT10N170 Datasheet Page 5

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IXGH10N170 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 10A
Power - Max110W
Switching Energy-
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

1000A

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 100A

Power - Max

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Switching Energy

2.7mJ (on), 5mJ (off)

Input Type

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Gate Charge

585nC

Td (on/off) @ 25°C

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Test Condition

480V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

46A

Current - Collector Pulsed (Icm)

84A

Vce(on) (Max) @ Vge, Ic

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Power - Max

313W

Switching Energy

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Input Type

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Gate Charge

225nC

Td (on/off) @ 25°C

45ns/730ns

Test Condition

800V, 25A, 22Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

56µJ (on), 78.5µJ (off)

Input Type

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Gate Charge

43nC

Td (on/off) @ 25°C

30ns/140ns

Test Condition

400V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

134.5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

900µJ

Input Type

Standard

Gate Charge

90nC

Td (on/off) @ 25°C

16ns/183ns

Test Condition

400V, 15A, 15Ohm, 15V

Reverse Recovery Time (trr)

110ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

PG-TO251-3

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

121A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

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Switching Energy

715µJ (on), 607µJ (off)

Input Type

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Gate Charge

198nC

Td (on/off) @ 25°C

21ns/133ns

Test Condition

400V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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