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IXGH10N100A

IXGH10N100A

For Reference Only

Part Number IXGH10N100A
PNEDA Part # IXGH10N100A
Description IGBT 1000V 20A 100W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH10N100A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH10N100A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGH10N100A Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic4V @ 15V, 10A
Power - Max100W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 45A

Power - Max

200W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 50A

Power - Max

781W

Switching Energy

3.6mJ (on), 2.64mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

25ns/260ns

Test Condition

800V, 50A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 [L]

Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 47Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-3P-3 Full Pack

Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

56A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 65A

Power - Max

833W

Switching Energy

605µJ (on), 896µJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

30ns/91ns

Test Condition

400V, 65A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3 Variant

Supplier Device Package

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